16 January 1998
Source: "Implementation of the Wassenaar
Arrangement List of Dual-Use Items: Revisions to the Commerce Control List
and Reporting Under the Wassenaar Arrangement; Rule."
Supplement No. 1 to Part 774--the Commerce Control List
Category 3--Electronics
A. Systems, Equipment and Components
Note 1: The control status of equipment and components described
in 3A001 or 3A002, other than those described in 3A001.a.3 to
3A001.a.10 or 3A001.a.12, which are specially designed for or which
have the same functional characteristics as other equipment is
determined by the control status of the other equipment.
Note 2: The control status of integrated circuits described in
3A001.a.3 to 3A001.a.9 or 3A001.a.12 that are unalterably programmed
or designed for a specific function for other equipment is
determined by the control status of the other equipment.
N.B.: When the manufacturer or applicant cannot determine the
control status of the other equipment, the control status of the
integrated circuits is determined in 3A001.a.3 to 3A001.a.9 and
3A001.a.12. If the integrated circuit is a silicon-based
``microcomputer microcircuit'' or microcontroller microcircuit
described in 3A001.a.3 having an operand (data) word length of 8 bit
or less, the control status of the integrated circuit is determined
in 3A001.a.3.
3A001 Electronic components, as follows (see List of Items
Controlled).
License Requirements
Reason for Control: NS, MT, AT
Control(s) Country Chart
NS applies to entire entry............. NS Column 2
MT applies to 3A001.a.1.a.............. MT Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A for MT; $1500: 3A001.c;$3000: 3A001.b.1, b.2, b.3, .d, .e
and .f; $5000: 3A001.a, and .b.4 to b.7
GBS: Yes, except 3A001.a.1.a, b.1, b.3 to b.7, .c to .f
[[Page 2502]]
CIV: Yes, except 3A001.a.1, a.2, a.3.a (for processors with a CTP
greater than 500 Mtops), a.5, a.6, a.9, a.10, and a.12, .b, .c, .d,
.e, and .f
List of Items Controlled
Unit: Number
Related Controls: See also 3A101, 3A201, and 3A991
Related Definitions: For the purposes of integrated circuits in
3A001.a.1, 5 x 103 Gy(Si)=5 x 105 Rads (Si); 5 x 106 Gy (Si)/
s=5 x 108 Rads (Si)/s.
Items: a. General purpose integrated circuits, as follows:
Note 1: The control status of wafers (finished or unfinished),
in which the function has been determined, is to be evaluated
against the parameters of 3A001.a.
Note 2: Integrated circuits include the following types:
``Monolithic integrated circuits''; ``Hybrid integrated circuits'';
``Multichip integrated circuits''; ``Film type integrated
circuits'', including silicon-on-sapphire integrated circuits;
``Optical integrated circuits''.
a.1. Integrated circuits, designed or rated as radiation
hardened to withstand any of the following:
a.1.a. A total dose of 5 x 10\3\ Gy (Si), or higher; or
a.1.b. A dose rate upset of 5 x 10\6\ Gy (Si)/s, or higher;
a.2. Integrated circuits described in 3A001.a.3 to 3A001.a.10 or
3A001.a.12, electrical erasable programmable read-only memories
(EEPROMs), flash memories and static random-access memories (SRAMs),
having any of the following:
a.2.a. Rated for operation at an ambient temperature above 398 K
(125 deg. C);
a.2.b. Rated for operation at an ambient temperature below 218 K
(-55 deg. C); or
a.2.c. Rated for operation over the entire ambient temperature
range from 218 K (-55 deg. C) to 398 K (125 deg. C);
Note: 3A001.a.2 does not apply to integrated circuits for civil
automobiles or railway train applications.
a.3. ``Microprocessor microcircuits'', ``micro-computer
microcircuits'' and microcontroller microcircuits, having any of the
following characteristics:
Note: 3A001.a.3 includes digital signal processors, digital
array processors and digital coprocessors.
a.3.a. A ``composite theoretical performance'' (``CTP'') of 260
million theoretical operations per second (Mtops) or more and an
arithmetic logic unit with an access width of 32 bit or more;
a.3.b. Manufactured from a compound semiconductor and operating
at a clock frequency exceeding 40 MHz; or
a.3.c. More than one data or instruction bus or serial
communication port for external interconnection in a parallel
processor with a transfer rate exceeding 2.5 Mbyte/s;
a.4. Storage integrated circuits manufactured from a compound
semiconductor;
a.5. Analog-to-digital and digital-to-analog converter
integrated circuits, as follows:
a.5.a. Analog-to-digital converters having any of the following:
a.5.a.1. A resolution of 8 bit or more, but less than 12 bit,
with a total conversion time to maximum resolution of less than 10
ns;
a.5.a.2. A resolution of 12 bit with a total conversion time to
maximum resolution of less than 200 ns; or
a.5.a.3. A resolution of more than 12 bit with a total
conversion time to maximum resolution of less than 2 <greek-m>s;
a.5.b. Digital-to-analog converters with a resolution of 12 bit
or more, and a ``settling time'' of less than 10 ns;
a.6. Electro-optical and ``optical integrated circuits''
designed for ``signal processing'' having all of the following:
a.6.a. One or more than one internal ``laser'' diode;
a.6.b. One or more than one internal light detecting element;
and
a.6.c. Optical waveguides;
a.7. Field programmable gate arrays having any of the following:
a.7.a. An equivalent usable gate count of more than 30,000 (2
input gates); or
a.7.b. A typical ``basic gate propagation delay time'' of less
than 0.4 ns;
a.8. Field programmable logic arrays having any of the
following:
a.8.a. An equivalent usable gate count of more than 30,000 (2
input gates); or
a.8.b. A toggle frequency exceeding 133 MHz;
a.9. Neural network integrated circuits;
a.10. Custom integrated circuits for which the function is
unknown, or the control status of the equipment in which the
integrated circuits will be used is unknown to the manufacturer,
having any of the following:
a.10.a. More than 208 terminals;
a.10.b. A typical ``basic gate propagation delay time'' of less
than 0.35 ns; or
a.10.c. An operating frequency exceeding 3 GHz;
a.11. Digital integrated circuits, other than those described in
3A001.a.3 to 3A001.a.10 and 3A001.a.12, based upon any compound
semiconductor and having any of the following:
a.11.a. An equivalent gate count of more than 300 (2 input
gates); or
a.11.b. A toggle frequency exceeding 1.2 GHz;
a.12. Fast Fourier Transform (FFT) processors having any of the
following:
a.12.a. A rated execution time for a 1,024 point complex FFT of
less than 1 ms;
a.12.b. A rated execution time for an N-point complex FFT of
other than 1,024 points of less than N log2 N /10,240 ms, where N is
the number of points; or
a.12.c. A butterfly throughput of more than 5.12 MHz;
b. Microwave or millimeter wave components, as follows:
b.1. Electronic vacuum tubes and cathodes, as follows:
Note: 3A001.b.1 does not control tubes designed or rated to
operate in the ITU allocated bands at frequencies not exceeding 31
GHz.
b.1.a. Travelling wave tubes, pulsed or continuous wave, as
follows:
b.1.a.1. Operating at frequencies higher than 31 GHz;
b.1.a.2. Having a cathode heater element with a turn on time to
rated RF power of less than 3 seconds;
b.1.a.3. Coupled cavity tubes, or derivatives thereof, with an
``instantaneous bandwidth'' of more than 7% or a peak power
exceeding 2.5 kW;
b.1.a.4. Helix tubes, or derivatives thereof, with any of the
following characteristics:
b.1.a.4.a. An ``instantaneous bandwidth'' of more than one
octave, and average power (expressed in kW) times frequency
(expressed in GHz) of more than 0.5;
b.1.a.4.b. An ``instantaneous bandwidth'' of one octave or less,
and average power (expressed in kW) times frequency (expressed in
GHz) of more than 1; or
b.1.a.4.c. Being ``space qualified'';
b.1.b. Crossed-field amplifier tubes with a gain of more than 17
dB;
b.1.c. Impregnated cathodes designed for electronic tubes, with
any of the following:
b.1.c.1. A turn on time to rated emission of less than 3
seconds; or
b.1.c.2. Producing a continuous emission current density at
rated operating conditions exceeding 5 A/cm<SUP>2</SUP>;
b.2. Microwave integrated circuits or modules containing
``monolithic integrated circuits'' operating at frequencies
exceeding 3 GHz;
Note: 3A001.b.2 does not control circuits or modules for
equipment designed or rated to operate in the ITU allocated bands at
frequencies not exceeding 31 GHz.
b.3. Microwave transistors rated for operation at frequencies
exceeding 31 GHz;
b.4. Microwave solid state amplifiers, having any of the
following:
b.4.a. Operating frequencies exceeding 10.5 GHz and an
``instantaneous bandwidth'' of more than half an octave; or
b.4.b. Operating frequencies exceeding 31 GHz;
b.5. Electronically or magnetically tunable band-pass or band-
stop filters having more than 5 tunable resonators capable of tuning
across a 1.5:1 frequency band (F<INF>max</INF>/F<INF>min</INF>) in
less than 10 <greek-m>s having any of the following:
b.5.a. A band-pass bandwidth of more than 0.5% of center
frequency; or
b.5.b. A band-stop bandwidth of less than 0.5% of center
frequency;
b.6. Microwave ``assemblies'' capable of operating at
frequencies exceeding 31 GHz;
b.7. Mixers and converters designed to extend the frequency
range of equipment described in 3A002.c, 3A002.e or 3A002.f beyond
the limits stated therein;
b.8. Microwave power amplifiers containing tubes controlled by
3A001.b and having all of the following:
b.8.a. Operating frequencies above 3 GHz;
b.8.b. An average output power density exceeding 80 W/kg; and
b.8.c. A volume of less than 400 cm<INF>3</INF>;
Note: 3A001.b.8 does not control equipment designed or rated for
operation in an ITU allocated band.
c. Acoustic wave devices, as follows, and specially designed
components therefor:
c.1. Surface acoustic wave and surface skimming (shallow bulk)
acoustic wave devices (i.e., ``signal processing'' devices employing
elastic waves in materials), having any of the following:
[[Page 2503]]
c.1.a. A carrier frequency exceeding 2.5 GHz;
c.1.b. A carrier frequency exceeding 1 GHz, but not exceeding
2.5 GHz, and having any of the following:
c.1.b.1. A frequency side-lobe rejection exceeding 55 dB;
c.1.b.2. A product of the maximum delay time and the bandwidth
(time in <greek-m>s and bandwidth in MHz) of more than 100;
c.1.b.3. A bandwidth greater than 250 MHz; or
c.1.b.4. A dispersive delay of more than 10 <greek-m>s; or
c.1.c. A carrier frequency of 1 GHz or less, having any of the
following:
c.1.c.1. A product of the maximum delay time and the bandwidth
(time in <greek-m>s and bandwidth in MHz) of more than 100;
c.1.c.2. A dispersive delay of more than 10 <greek-m>s; or
c.1.c.3. A frequency side-lobe rejection exceeding 55 dB and a
bandwidth greater than 50 MHz;
c.2. Bulk (volume) acoustic wave devices (i.e., ``signal
processing'' devices employing elastic waves) that permit the direct
processing of signals at frequencies exceeding 1 GHz;
c.3. Acoustic-optic ``signal processing'' devices employing
interaction between acoustic waves (bulk wave or surface wave) and
light waves that permit the direct processing of signals or images,
including spectral analysis, correlation or convolution;
d. Electronic devices and circuits containing components,
manufactured from ``superconductive'' materials specially designed
for operation at temperatures below the ``critical temperature'' of
at least one of the ``superconductive'' constituents, with any of
the following:
d.1. Electromagnetic amplification:
d.1.a. At frequencies equal to or less than 31 GHz with a noise
figure of less than 0.5 dB; or
d.1.b. At frequencies exceeding 31 GHz;
d.2. Current switching for digital circuits using
``superconductive'' gates with a product of delay time per gate (in
seconds) and power dissipation per gate (in watts) of less than
10<SUP>-14</SUP> J; or
d.3. Frequency selection at all frequencies using resonant
circuits with Q-values exceeding 10,000;
e. High energy devices, as follows:
e.1. Batteries and photovoltaic arrays, as follows:
Note: 3A001.e.1 does not control batteries with volumes equal to
or less than 27 cm\3\ (e.g., standard C-cells or R14 batteries).
e.1.a. Primary cells and batteries having an energy density
exceeding 480 Wh/kg and rated for operation in the temperature range
from below 243 K (-30 deg. C) to above 343 K (70 deg. C);
e.1.b. Rechargeable cells and batteries having an energy density
exceeding 150 Wh/kg after 75 charge/discharge cycles at a discharge
current equal to C/5 hours (C being the nominal capacity in ampere
hours) when operating in the temperature range from below 253 K (-
20 deg. C) to above 333 K (60 deg. C);
Technical Note: Energy density is obtained by multiplying the
average power in watts (average voltage in volts times average
current in amperes) by the duration of the discharge in hours to 75%
of the open circuit voltage divided by the total mass of the cell
(or battery) in kg.
e.1.c. ``Space qualified'' and radiation hardened photovoltaic
arrays with a specific power exceeding 160 W/m\2\ at an operating
temperature of 301 K (28 deg. C) under a tungsten illumination of 1
kW/m\2\ at 2,800 K (2,527 deg. C);
e.2. High energy storage capacitors, as follows:
N.B.: See also 3A201.a.
e.2.a. Capacitors with a repetition rate of less than 10 Hz
(single shot capacitors) having all of the following:
e.2.a.1. A voltage rating equal to or more than 5 kV;
e.2.a.2. An energy density equal to or more than 250 J/kg; and
e.2.a.3. A total energy equal to or more than 25 kJ;
e.2.b. Capacitors with a repetition rate of 10 Hz or more
(repetition rated capacitors) having all of the following:
e.2.b.1. A voltage rating equal to or more than 5 kV;
e.2.b.2. An energy density equal to or more than 50 J/kg;
e.2.b.3. A total energy equal to or more than 100 J; and
e.2.b.4. A charge/discharge cycle life equal to or more than
10,000;
e.3. ``Superconductive'' electromagnets and solenoids specially
designed to be fully charged or discharged in less than one second,
having all of the following:
N.B.: See also 3A201.b.
e.3.a. Energy delivered during the discharge exceeding 10 kJ in
the first second;
e.3.b. Inner diameter of the current carrying windings of more
than 250 mm; and
e.3.c. Rated for a magnetic induction of more than 8 T or
``overall current density'' in the winding of more than 300 A/mm
\2\;
Note: 3A001.e.3 does not control ``superconductive''
electromagnets or solenoids specially designed for Magnetic
Resonance Imaging (MRI) medical equipment.
f. Rotary input type shaft absolute position encoders having any
of the following:
f.1. A resolution of better than 1 part in 265,000 (18 bit
resolution) of full scale; or
f.2. An accuracy better than <plus-minus> 2.5 seconds of arc.
3A002 General purpose electronic equipment, as follows (see List of
Items Controlled).
License Requirements
Reason for Control: NS, AT
Control(s) Country Chart
NS applies to entire entry............. NS Column 2
AT applies to entire entry............. AT Column 1
License Requirement Notes: See Sec. 743.1 of the EAR for
reporting requirements for exports under License Exceptions.
License Exceptions
LVS: $3000: 3A002.a, .e, .f, .g; $5000: 3A002.b to .d
GBS: Yes for 3A002.a.1.; 3A002.b (synthesized output frequency of
2.6 GHz or less and a ``frequency switching time'' of 0.3 ms or
more); and 3A002.d (synthesized output frequency of 2.6 GHz or less
and a ``frequency switching time'' of 0.3 ms or more)
CIV: Yes for 3A002.a.1 (provided all of the following conditions are
met: (1) Bandwidths do not exceed: 4 MHz per track and have up to 28
tracks or 2 MHz per track and have up to 42 tracks; (2) Tape speed
does not exceed 6.1 m/s; (3) They are not designed for underwater
use; (4) They are not ruggedized for military use; and (5) Recording
density does not exceed 653.2 magnetic flux sine waves per mm);
3A002.b (synthesized output frequency of 2.6 GHz or less; and a
``frequency switching time'' of 0.3 ms or more), 3A002.d
(synthesized output frequency of 2.6 GHz or less; and a ``frequency
switching time'' of 0.3 ms or more).
List of Items Controlled
Unit: Number
Related Controls: See also 3A202 and 3A992
Related Definitions: N/A
Items: a. Recording equipment, as follows, and specially designed
test tape therefor:
a.1. Analog instrumentation magnetic tape recorders, including
those permitting the recording of digital signals (e.g., using a
high density digital recording (HDDR) module), having any of the
following:
a.1.a. A bandwidth exceeding 4 MHz per electronic channel or
track;
a.1.b. A bandwidth exceeding 2 MHz per electronic channel or
track and having more than 42 tracks; or
a.1.c. A time displacement (base) error, measured in accordance
with applicable IRIG or EIA documents, of less than <plus-minus> 0.1
<greek-m>s;
Note: Analog magnetic tape recorders specially designed for
civilian video purposes are not considered to be instrumentation
tape recorders.
a.2. Digital video magnetic tape recorders having a maximum
digital interface transfer rate exceeding 180 Mbit/s;
Note: 3A002.a.2 does not control digital video magnetic tape
recorders specially designed for television recording using a signal
format standardized or recommended by the CCIR or the IEC for civil
television applications.
a.3. Digital instrumentation magnetic tape data recorders
employing helical scan techniques or fixed head techniques, having
any of the following:
a.3.a. A maximum digital interface transfer rate exceeding 175
Mbit/s; or
a.3.b. Being ``space qualified'';
Note: 3A002.a.3 does not control analog magnetic tape recorders
equipped with HDDR conversion electronics and configured to record
only digital data.
a.4. Equipment, having a maximum digital interface transfer rate
exceeding 175 Mbit/s, designed to convert digital video magnetic
tape recorders for use as digital instrumentation data recorders;
a.5. Waveform digitizers and transient recorders having all of
the following:
N.B.: See also 3A202.
a.5.a. Digitizing rates equal to or more than 200 million
samples per second and a resolution of 10 bits or more; and
[[Page 2504]]
a.5.b. A continuous throughput of 2 Gbit/s or more;
Technical Note: For those instruments with a parallel bus
architecture, the continuous throughput rate is the highest word
rate multiplied by the number of bits in a word. Continuous
throughput is the fastest data rate the instrument can output to
mass storage without the loss of any information while sustaining
the sampling rate and analog-to-digital conversion.
b. ``Frequency synthesizer'', ``assemblies'' having a
``frequency switching time'' from one selected frequency to another
of less than 1 ms;
c. ``Signal analyzers'', as follows:
c.1. ``Signal analyzers'' capable of analyzing frequencies
exceeding 31 GHz;
c.2. ``Dynamic signal analyzers'' having a ``real-time
bandwidth'' exceeding 25.6 Khz;
Note: 3A002.c.2 does not control those ``dynamic signal
analyzers'' using only constant percentage bandwidth filters.
Technical Note: Constant percentage bandwidth filters are also
known as octave or fractional octave filters.
d. Frequency synthesized signal generators producing output
frequencies, the accuracy and short term and long term stability of
which are controlled, derived from or disciplined by the internal
master frequency, and having any of the following:
d.1. A maximum synthesized frequency exceeding 31 GHz;
d.2. A ``frequency switching time'' from one selected frequency
to another of less than 1 ms; or
d.3. A single sideband (SSB) phase noise better than -(126+20
log<INF>10</INF>F-20 log<INF>10</INF>f) in dBc/Hz, where F is the
off-set from the operating frequency in Hz and f is the operating
frequency in MHz;
Note: 3A002.d does not control equipment in which the output
frequency is either produced by the addition or subtraction of two
or more crystal oscillator frequencies, or by an addition or
subtraction followed by a multiplication of the result.
e. Network analyzers with a maximum operating frequency
exceeding 40 GHz;
f. Microwave test receivers having all of the following:
f.1. A maximum operating frequency exceeding 40 GHz; and
f.2. Being capable of measuring amplitude and phase
simultaneously;
g. Atomic frequency standards having any of the following:
g.1. Long-term stability (aging) less (better) than
1 x 10<SUP>-11</SUP>/month; or
g.2. Being ``space qualified''.
Note: 3A002.g.1 does not control non-''space qualified''
rubidium standards.
3A101 Electronic equipment, devices and components, other than those
controlled by 3A001, as follows (see List of Items Controlled).
License Requirements
Reason for Control: MT, AT
Control(s) Country Chart
MT applies to entire entry............. MT Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Number
Related Controls: Items controlled in 3A101.a are subject to the
export licensing authority of the U.S. Department of State, Office
of Defense Trade Controls (See 22 CFR part 121).
Related Definitions: N/A
Items: a. Analog-to-digital converters, usable in ``missiles'',
designed to meet military specifications for ruggedized equipment;
b. Accelerators capable of delivering electromagnetic radiation
produced by bremsstrahlung from accelerated electrons of 2 MeV or
greater, and systems containing those accelerators.
Note: 3A101.b above does not include equipment specially
designed for medical purposes.
3A201 Electronic components, other than those controlled by 3A001, as
follows (see List of Items Controlled).
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Number
Related Controls: This entry does not control magnets that are
specially designed for and exported as parts of medical nuclear
magnetic resonance (NMR) imaging systems. Such parts may be exported
in separate shipments from different sources, provided that the
related export control documents clearly specify that the parts are
for medical NMR imaging systems that are being exported.
Related Definition: N/A
Items: a. Capacitors with the following characteristics:
a.1. Voltage rating greater than 1.4 kV, energy storage greater
than 10 J, capacitance greater than 0.5 <greek-m>F and series
inductance less than 50 Nh; or
a.2. Voltage rating greater than 750 V, capacitance greater than
0.25 <greek-m>F and series inductance less than 10 Nh;
b. Superconducting solenoidal electromagnets with all of the
following characteristics:
b.1. Capable of creating magnetic fields of more than 2 teslas
(20 kilogauss);
b.2. With an L/D ratio (length divided by inner diameter)
greater than 2;
b.3. With an inner diameter of more than 300 mm; and
b.4. With a magnetic field uniform to better than 1% over the
central 50% of the inner volume;
Note: 3A201.b does not specify magnets specially designed for
and exported as parts of medical nuclear magnetic resonance (NMR)
imaging systems. The phrase ``as part of'' does not necessarily mean
physical part in the same shipment; separate shipments from
different sources are allowed, provided the related export documents
clearly specify that the shipments are dispatched ``as part of'' the
imaging systems.
c. Flash X-ray generators or pulsed electron accelerators with
peak energy of 500 keV or greater, as follows, except accelerators
that are component parts of devices designed for purposes other than
electron beam or X-ray radiation (electron microscopy, for example)
and those designed for medical purposes:
c.1. Having an accelerator peak electron energy of 500 keV or
greater but less than 25 MeV and with a figure of merit (K) of 0.25
or greater, where K is defined as:
K=1.7 x 103V2.65Q, where V is the peak electron energy in
million electron volts and Q is the total accelerated charge in
coulombs if the accelerator beam pulse duration is less than or
equal to 1 microsecond; if the accelerator beam pulse duration is
greater than 1 microsecond, Q is the maximum accelerated charge in 1
microsecond {Q equals the integral of i with respect to t, over the
lesser of 1 microsecond or the time duration of the beam pulse
(Q={integral} idt), where i is beam current in amperes and t is time
in seconds}; or
c.2. Having an accelerator peak electron energy of 25 MeV or
greater and a peak power greater than 50 MW. {Peak power = (peak
potential in volts) x (peak beam current in amperes)}.
Technical Notes: a. Time duration of the beam pulse--In
machines, based on microwave accelerating cavities, the time
duration of the beam pulse is the lesser of 1 microsecond or the
duration of the bunched beam packet resulting from one microwave
modulator pulse.
b. Peak beam current--In machines based on microwave
accelerating cavities, the peak beam current is the average current
in the time duration of a bunched beam packet.
3A225 Frequency changers (also known as converters or inverters) or
generators, other than those controlled by 0B001.c.11, having all of
the characteristics (see List of Items Controlled).
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Number
Related Controls: Frequency changers (also known as converters or
inverters)
[[Page 2505]]
especially designed or prepared to supply motor stators and having
the characteristics described in 3A225.b and .d, together with a
total harmonic distortion of less than 2 percent and an efficiency
of greater than 80 percent are subject to the export licensing
authority of the Nuclear Regulatory Commission. (See 10 CFR part
110.)
Related Definition: Motor stators are especially designed or
prepared ring-shaped stators for high-speed multiphase AC hysteresis
(or reluctance) motors for synchronous operation within a vacuum in
the frequency range of 600 Hz to 2,000 Hz, and a power range of 50
VA to 1,000 VA. The stators consist of multiphase windings on a
laminated low-loss iron core comprising thin layers typically to 2.0
mm (.008 in) thick or less.
Items: a. A multiphase output capable of providing a power of 40 W
or more;
b. Capable of operating in the frequency range between 600 and
2000 Hz;
c. Total harmonic distortion below 10%; and
d. Frequency control better than 0.1%.
3A226 Direct current high-power supplies, other than those controlled
by 0B001.j.6, capable of continuously producing, over a time period of
8 hours, 100 V or greater with current output of 500 A or greater and
with current or voltage regulation better than 0.1%.
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: $ value
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3A227 High-voltage direct current power supplies, other than those
controlled by 0B001.j.5, capable of continuously producing, over a time
period of 8 hours, 20,000 V or greater with current output of 1 A or
greater and with current or voltage regulation better than 0.1%.
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: $ value
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3A228 Switching devices, as follows (see List of Items Controlled).
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Number
Related Controls: N/A
Related Definitions: N/A
Items: a. Cold-cathode tubes (including gas krytron tubes and vacuum
sprytron tubes), whether gas filled or not, operating similarly to a
spark gap, containing three or more electrodes, and having all of
the following characteristics:
a.1. Anode peak voltage rating of 2,500 V or more;
a.2. Anode peak current rating of 100 A or more; and
a.3. Anode delay time of 10 microsecond or less;
b. Triggered spark-gaps having an anode delay time of 15
microsecond or less and rated for a peak current of 500 A or more;
c. Modules or assemblies with a fast switching function having
all of the following characteristics:
c.1. Anode peak voltage rating greater than 2,000 V;
c.2. Anode peak current rating of 500 A or more; and
c.3. Turn-on time of 1 microsecond or less.
3A229 Firing sets and equivalent high-current pulse generators (for
detonators controlled by 3A232), as follows (see List of Items
Controlled).
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Number
Related Controls: See also U.S. Munitions List
Related Definitions: N/A
Items: a. Explosive detonator firing sets designed to drive multiple
controlled detonators controlled by 3A232;
b. Modular electrical pulse generators (pulsers) designed for
portable, mobile or ruggedized use (including xenon flash-lamp
drivers) having all the following characteristics:
b.1. Capable of delivering their energy in less than 15
microsecond;
b.2. Having an output greater than 100 A;
b.3. Having a rise time of less than 10 microsecond into loads
of less than 40 ohms (rise time is the time interval from 10% to 90%
current amplitude when driving a resistive load);
b.4. Enclosed in a dust-tight enclosure;
b.5. No dimension greater than 254 mm;
b.6. Weight less than 25 kg; and
b.7. Specified for use over an extended temperature range 223 K
(-50 deg. C) to 373 K (100 deg. C) or specified as suitable for
aerospace use.
3A230 High-speed pulse generators with output voltages greater than 6
volts into a less than 55 ohm resistive load, and with pulse transition
times less than 500 picoseconds.
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Number
Related Controls: N/A
Related Definitions: In this entry, ``pulse transition time'' is
defined as the time interval between 10% and 90% voltage amplitude.
Items: The list of items controlled is contained in the ECCN
heading.
3A231 Neutron generator systems, including tubes, designed for
operation without an external vacuum system and utilizing electrostatic
acceleration to induce a tritium-deuterium nuclear reaction.
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Number, parts and accessories in $ value
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3A232 Detonators and multipoint initiation systems, as follows (see
List of Items Controlled).
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 1
[[Page 2506]]
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Number
Related Controls: This entry does not control detonators using only
primary explosives, such as lead azide.
Related Definition: The detonators of concern all utilize a small
electrical conductor (bridge, bridge wire or foil) that explosively
vaporizes when a fast, high-current electrical pulse is passed
through it. In nonslapper types, the exploding conductor starts a
chemical detonation in a contacting high-explosive material such as
PETN (Pentaerythritoltetranitrate). In slapper detonators, the
explosive vaporization of the electrical conductor drives a flyer or
slapper across a gap and the impact of the slapper on an explosive
starts a chemical detonation. The slapper in some designs is driven
by a magnetic force. The term exploding foil detonator may refer to
either an EB or a slapper-type detonator. Also, the word initiator
is sometimes used in place of the word detonator.
Items: a. Electrically driven explosive detonators, the following:
a.1. Exploding bridge (EB);
a.2. Exploding bridge wire (EBW);
a.3. Slapper;
a.4. Exploding foil initiators (EFI);
b. Arrangements using single or multiple detonators designed to
nearly simultaneously initiate an explosive surface (over greater
than 5000 mm\2\) from a single firing signal (with an initiation
timing spread over the surface of less than 2.5 microseconds).
3A233 Mass spectrometers, other than those controlled by 0B002.g,
capable of measuring ions of 230 atomic mass units or greater and
having a resolution of better than 2 parts in 230, and ion sources
therefor.
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Number
Related Controls: Specially designed or prepared magnetic or
quadruple mass spectrometers that have the following characteristics
and are capable of taking on-line samples of feed, product, or tails
from UF<INF>6</INF> gas streams are subject to the export licensing
authority of the Nuclear Regulatory Commission. (See 10 CFR part
110.): (a) Unit resolution for mass greater than 320; (b) Ion
sources that are constructed of or lined with nichrome or that are
monel or nickel-plated; (c) Electron bombardment ionization sources;
(d) Having a collector system suitable for isotopic analysis.
Related Definitions: N/A
Items: a. Inductively coupled plasma mass spectrometers (ICP/MS);
b. Glow discharge mass spectrometers (GDMS);
c. Thermal ionization mass spectrometers (TIMS);
d. Electron bombardment mass spectrometers that have a source
chamber constructed from, lined with or plated with materials
resistant to UF6;
e. Molecular beam mass spectrometers as follows:
e.1. Having a source chamber constructed from, lined with or
plated with stainless steel or molybdenum and have a cold trap
capable of cooling to 193 K (-80 deg. C) or less; or
e.2. Having a source chamber constructed from, lined with or
plated with materials resistant to UF<INF>6</INF>; or
f. Mass spectrometers equipped with a microfluorination ion
source designed for use with actinides or actinide fluorides.
3A292 Oscilloscopes and transient recorders other than those
controlled by 3A002.a.5, and specially designed components therefor.
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 2
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Number
Related Controls: N/A
Related Definitions: ``Bandwidth'' is defined as the band of
frequencies over which the deflection on the cathode ray tube does
not fall below 70.7% of that at the maximum point measured with a
constant input voltage to the oscilloscope amplifier.
Items: a. Non-modular analog oscilloscopes having a bandwidth of 1
GHz or greater;
b. Modular analog oscilloscope systems having either of the
following characteristics:
b.1. A mainframe with a bandwidth of 1 GHz or greater; or
b.2. Plug-in modules with an individual bandwidth of 4 GHz or
greater;
c. Analog sampling oscilloscopes for the analysis of recurring
phenomena with an effective bandwidth greater than 4 GHz;
d. Digital oscilloscopes and transient recorders, using analog-
to-digital conversion techniques, capable of storing transients by
sequentially sampling single-shot inputs at successive intervals of
less than 1 ns (greater than 1 giga-sample per second), digitizing
to 8 bits or greater resolution and storing 256 or more samples.
Note: Specially designed components controlled by this item are
the following, for analog oscilloscopes:
1. Plug-in units;
2. External amplifiers;
3. Pre-amplifiers;
4. Sampling devices;
5. Cathode ray tubes.
3A980 Voice print identification and analysis equipment and parts,
n.e.s.
License Requirements
Reason for Control: CC
Control(s) Country Chart
CC applies to entire entry............. CC Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Equipment in number
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3A981 Polygraphs (except biomedical recorders designed for use in
medical facilities for monitoring biological and neurophysical
responses); fingerprint analyzers, cameras and equipment, n.e.s.;
automated fingerprint and identification retrieval systems, n.e.s.;
psychological stress analysis equipment; electronic monitoring
restraint devices; and specially designed parts and accessories, n.e.s.
License Requirements
Reason for Control: CC
Control(s) Country Chart
CC applies to entire entry............. CC Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Equipment in number
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3A991 Electronic devices and components not controlled by 3A001.
License Requirements
Reason for Control: AT
Control(s) Country Chart
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Equipment in number
Related Controls: N/A
Related Definitions: N/A
Items: a. ``Microprocessor microcircuits'', ``microcomputer
microcircuits'', and microcontroller microcircuits having a clock
frequency exceeding 25 MHz;
b. Storage integrated circuits, as follows:
[[Page 2507]]
b.1. Electrical erasable programmable read-only memories
(EEPROMs) with a storage capacity;
b.1.a. Exceeding 16 Mbits per package for flash memory types; or
b.1.b. Exceeding either of the following limits for all other
EEPROM types:
b.1.b.1. Exceeding 1 Mbit per package; or
b.1.b.2. Exceeding 256 kbit per package and a maximum access
time of less than 80 ns;
b.2. Static random access memories (SRAMs) with a storage
capacity:
b.2.a. Exceeding 1 Mbit per package; or
b.2.b. Exceeding 256 kbit per package and a maximum access time
of less than 25 ns;
c. Field programmable logic arrays having either of the
following:
c.1. An equivalent gate count of more than 5000 (2 input gates);
or
c.2. A toggle frequency exceeding 100 MHz;
d. Custom integrated circuits for which either the function is
unknown, or the control status of the equipment in which the
integrated circuits will be used is unknown to the manufacturer,
having any of the following:
d.1. More than 144 terminals; or
d.2. A typical ``basic propagation delay time'' of less than 0.4
ns.
e. Travelling wave tubes, pulsed or continuous wave, as follows:
e.1. Coupled cavity tubes, or derivatives thereof;
e.2. Helix tubes, or derivatives thereof, with any of the
following:
e.2.a.1. An ``instantaneous bandwidth'' of half an octave or
more; and
e.2.a.2. The product of the rated average output power
(expressed in kW) and the maximum operating frequency (expressed in
GHz) of more than 0.2;
e.2.b.1 An ``instantaneous bandwidth'' of less than half an
octave; and
e.2.b.2. The product of the rated average output power
(expressed in kW) and the maximum operating frequency (expressed in
GHz) of more than 0.4;
f. Flexible waveguides designed for use at frequencies exceeding
40 GHz;
g. Surface acoustic wave and surface skimming (shallow bulk)
acoustic wave devices (i.e., ``signal processing'' devices employing
elastic waves in materials), having either of the following:
g.1. A carrier frequency exceeding 1 GHz; or
g.2. A carrier frequency of 1 GHz or less; and
g.2.a. A frequency side-lobe rejection exceeding 55 dB;
g.2.b. A product of the maximum delay time and bandwidth (time
in microseconds and bandwidth in MHz) of more than 100; or
g.2.c. A dispersive delay of more than 10 microseconds.
h. Batteries, as follows:
Note: 3A991.h does not control batteries with volumes equal to
or less than 26 cm<SUP>3</SUP> (e.g., standard C-cells or UM-2
batteries).
h.1. Primary cells and batteries having an energy density
exceeding 350 Wh/kg and rated for operation in the temperature range
from below 243 K (-30 deg. C) to above 343 K (70 deg. C);
h.2. Rechargeable cells and batteries having an energy density
exceeding 150 Wh/kg after 75 charge/discharge cycles at a discharge
current equal to C/5 hours (C being the nominal capacity in ampere
hours) when operating in the temperature range from below 253 K
(-20 deg. C) to above 333 K (60 deg. C);
Technical Note: Energy density is obtained by multiplying the
average power in watts (average voltage in volts times average
current in amperes) by the duration of the discharge in hours to 75
percent of the open circuit voltage divided by the total mass of the
cell (or battery) in kg.
i. ``Superconductive'' electromagnets or solenoids specially
designed to be fully charged or discharged in less than one minute,
having all of the following:
Note: 3A991.i does not control ``superconductive''
electromagnets or solenoids designed for Magnetic Resonance Imaging
(MRI) medical equipment.
i.1. Maximum energy delivered during the discharge divided by
the duration of the discharge of more than 500 kJ per minute;
i.2. Inner diameter of the current carrying windings of more
than 250 mm; and
i.3. Rated for a magnetic induction of more than 8T or ``overall
current density'' in the winding of more than 300 A/mm<SUP>2</SUP>.
j. Circuits or systems for electromagnetic energy storage,
containing components manufactured from ``superconductive''
materials specially designed for operation at temperatures below the
``critical temperature'' of at least one of their
``superconductive'' constituents, having all of the following:
j.1. Resonant operating frequencies exceeding 1 MHz;
j.2. A stored energy density of 1 MJ/M<SUP>3</SUP> or more; and
j.3. A discharge time of less than 1 ms;
k. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal
construction and rate for a peak current of 500 A or more.
3A992 General purpose electronic equipment not controlled by 3A002.
License Requirements
Reason for Control: AT
Control(s) Country Chart
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: $1000 for Syria for .a only
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Equipment in number
Related Controls: N/A
Related Definitions: N/A
Items: a. Electronic test equipment, n.e.s.
b. Digital instrumentation magnetic tape data recorders having
any of the following characteristics;
b.1. A maximum digital interface transfer rate exceeding 60
Mbit/s and employing helical scan techniques;
b.2. A maximum digital interface transfer rate exceeding 120
Mbit/s and employing fixed head techniques; or
b.3. ``Space qualified'';
c. Equipment, with a maximum digital interface transfer rate
exceeding 60 Mbit/s, designed to convert digital video magnetic tape
recorders for use as digital instrumentation data recorders;
B. Test, Inspection and Production Equipment
3B001 Equipment for the manufacturing of semiconductor devices or
materials and specially designed components and accessories therefor.
License Requirements
Reason for Control: NS, AT
Control(s) Country Chart
NS applies to entire entry............. NS Column 2
AT applies to entire entry............. AT Column 1
License Requirement Notes: See Sec. 743.1 of the EAR for
reporting requirements for exports under License Exceptions.
License Exceptions
LVS: $500
GBS: Yes, except 3B001. a.2 and a.3; and for equipment controlled
under 3B001.e, they cannot be connected to equipment controlled by
3B001.a.2, a.3, and .f.
CIV: Yes for equipment controlled by 3B001.a.1
List of Items Controlled
Unit: Number
Related Controls: See also 3B991
Related Definitions: N/A
Items: a. ``Stored program controlled'' equipment designed for
epitaxial growth, as follows:
a.1. Equipment capable of producing a layer thickness uniform to
less than <plus-minus> 2.5% across a distance of 75 mm or more;
a.2. Metal organic chemical vapor deposition (MOCVD) reactors
specially designed for compound semiconductor crystal growth by the
chemical reaction between materials controlled by 3C003 or 3C004;
a.3. Molecular beam epitaxial growth equipment using gas
sources;
b. ``Stored program controlled'' equipment designed for ion
implantation, having any of the following:
b.1. An accelerating voltage exceeding 200 keV;
b.2. Being specially designed and optimized to operate at an
accelerating voltage of less than 10 keV;
b.3. Direct write capability; or
b.4. Being capable of high energy oxygen implant into a heated
semiconductor material ``substrate'';
c. ``Stored program controlled'' anisotropic plasma dry etching
equipment, as follows:
c.1. Equipment with cassette-to-cassette operation and load-
locks, and having any of the following:
c.1.a. Magnetic confinement; or
c.1.b. Electron cyclotron resonance (ECR);
c.2. Equipment specially designed for equipment controlled by
3B001.e. and having any of the following:
c.2.a. Magnetic confinement; or
c.2.b. ECR;
d. ``Stored program controlled'' plasma enhanced CVD equipment,
as follows:
[[Page 2508]]
d.1. Equipment with cassette-to-cassette operation and load-
locks, and having any of the following:
d.1.a. Magnetic confinement; or
d.1.b. ECR;
d.2. Equipment specially designed for equipment controlled by
3B001.e. and having any of the following:
d.2.a. Magnetic confinement; or
d.2.b. ECR;
e. ``Stored program controlled'' automatic loading multi-chamber
central wafer handling systems, having all of the following:
e.1. Interfaces for wafer input and output, to which more than
two pieces of semiconductor processing equipment are to be
connected; and
e.2. Designed to form an integrated system in a vacuum
environment for sequential multiple wafer processing;
Note: 3B001.e. does not control automatic robotic wafer handling
systems not designed to operate in a vacuum environment.
f. ``Stored program controlled'' lithography equipment, as
follows:
f.1. Align and expose step and repeat equipment for wafer
processing using photo-optical or X-ray methods, having any of the
following:
f.1.a. A light source wavelength shorter than 400 nm; or
f.1.b. Capable of producing a pattern with a minimum resolvable
feature size of 0.7 <greek-m>m or less;
Note: The minimum resolvable feature size is calculated by the
following formula:
(an exposure light source wavelength in <greek-m>m) x (K factor)
MRF = ----------------------------------
numerical aperture
Where the K factor = 0.7.
MRF = minimum resolvable feature size.
f.2. Equipment specially designed for mask making or
semiconductor device processing using deflected focussed electron
beam, ion beam or ``laser'' beam, having any of the following:
f.2.a. A spot size smaller than 0.2 <greek-m>m;
f.2.b. Being capable of producing a pattern with a feature size
of less than 1 <greek-m>m; or
f.2.c. An overlay accuracy of better than <plus-minus> 0.20
<greek-m>m (3 sigma);
g. Masks and reticles designed for integrated circuits
controlled by 3A001;
h. Multi-layer masks with a phase shift layer.
3B002 ``Stored program controlled'' test equipment, specially
designed for testing finished or unfinished semiconductor devices and
specially designed components and accessories therefor.
License Requirements
Reason for Control: NS, AT
Control(s) Country Chart
NS applies to entire entry............. NS Column 2
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: $500
GBS: Yes
CIV: N/A
List of Items Controlled
Unit: Number
Related Controls: See also 3B992
Related Definitions: N/A
Items: a. For testing S-parameters of transistor devices at
frequencies exceeding 31 GHz;
b. For testing integrated circuits capable of performing
functional (truth table) testing at a pattern rate of more than 60
MHz;
Note: 3B002.b does not control test equipment specially designed
for testing:
1. ``Assemblies'' or a class of ``assemblies'' for home or
entertainment applications;
2. Uncontrolled electronic components, ``assemblies'' or
integrated circuits.
c. For testing microwave integrated circuits at frequencies
exceeding 3 GHz;
Note: 3B002.c does not control test equipment specially designed
for testing microwave integrated circuits for equipment designed or
rated to operate in the ITU allocated bands at frequencies not
exceeding 31 GHz.
d. Electron beam systems designed for operation at 3 keV or
below, or ``laser'' beam systems, for the non-contactive probing of
powered-up semiconductor devices, having all of the following:
d.1. Stroboscopic capability with either beam-blanking or
detector strobing; and
d.2. An electron spectrometer for voltage measurement with a
resolution of less than 0.5 V.
Note: 3B002.d does not control scanning electron microscopes,
except when specially designed and instrumented for the non-
contactive probing of powered-up semiconductor devices.
3B991 Equipment not controlled by 3B001 for the manufacture of
electronic components and materials, and specially designed components
and accessories therefor.
License Requirements
Reason for Control: AT
Control(s) Country Chart
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Equipment in number
Related Controls: N/A
Related Definitions: N/A
Items: a. Equipment specially designed for the manufacture of
electron tubes, optical elements and specially designed components
therefor controlled by 3A001 or 3A991;
b. Equipment specially designed for the manufacture of
semiconductor devices, integrated circuits and ``assemblies'', as
follows, and systems incorporating or having the characteristics of
such equipment:
Note: 3B991.b also controls equipment used or modified for use
in the manufacture of other devices, such as imaging devices,
electro-optical devices, acoustic-wave devices.
b.1. Equipment for the processing of materials for the
manufacture of devices and components as specified in the heading of
3B991.b, as follows:
Note: 3B991 does not control quartz furnace tubes, furnace
liners, paddles, boats (except specially designed caged boats),
bubblers, cassettes or crucibles specially designed for the
processing equipment controlled by 3B991.b.1.
b.1.a. Equipment for producing polycrystalline silicon and
materials controlled by 3C001;
b.1.b. Equipment specially designed for purifying or processing
III/V and II/VI semiconductor materials controlled by 3C001, 3C002,
3C003, or 3C004, except crystal pullers, for which see 3B991.b.1.c
below;
b.1.c. Crystal pullers and furnaces, as follows:
Note: 3B991.b.1.c does not control diffusion and oxidation
furnaces.
b.1.c.1. Annealing or recrystallizing equipment other than
constant temperature furnaces employing high rates of energy
transfer capable of processing wafers at a rate exceeding 0.005
m<SUP>2</SUP> per minute;
b.1.c.2. ``Stored program controlled'' crystal pullers having
any of the following characteristics:
b.1.c.2.a. Rechargeable without replacing the crucible
container;
b.1.c.2.b. Capable of operation at pressures above 2.5 x
10<SUP>5</SUP> Pa; or
b.1.c.2.c. Capable of pulling crystals of a diameter exceeding
100 mm;
b.1.d. ``Stored program controlled'' equipment for epitaxial
growth having any of the following characteristics:
b.1.d.1. Capable of producing a layer thickness uniformity
across the wafer of equal to or better than <plus-minus>3.5%;
b.1.d.2. Rotation of individual wafers during processing; or
b.1.e. Molecular beam epitaxial growth equipment;
b.1.f. ``Magnetically enhanced'' ``sputtering'' equipment with
specially designed integral load locks capable of transferring
wafers in an isolated vacuum environment;
b.1.g. Equipment specially designed for ion implantation, ion-
enhanced or photo-enhanced diffusion, having any of the following
characteristics:
b.1.g.1. Patterning capability;
b.1.g.2. Accelerating voltage for more than 200 keV; or
b.1.g.3. Capable of high energy oxygen implant into a heated
``substrate'';
b.1.h. ``Stored program controlled'' equipment for the selective
removal (etching) by means of anisotropic dry methods (e.g.,
plasma), as follows:
b.1.h.1. Batch types having either of the following:
b.1.h.1.a. End-point detection, other than optical emission
spectroscopy types; or
b.1.h.1.b. Reactor operational (etching) pressure of 26.66 Pa or
less;
b.1.h.2. Single wafer types having any of the following:
b.1.h.2.a. End-point detection, other than optical emission
spectroscopy types;
b.1.h.2.b. Reactor operational (etching) pressure of 26.66 Pa or
less; or
[[Page 2509]]
b.1.h.2.c. Cassette-to-cassette and load locks wafer handling;
Notes: 1. ``Batch types'' refers to machines not specially
designed for production processing of single wafers. Such machines
can process two or more wafers simultaneously with common process
parameters, e.g., RF power, temperature, etch gas species, flow
rates.
2. ``Single wafer types'' refers to machines specially designed
for production processing of single wafers. These machines may use
automatic wafer handling techniques to load a single wafer into the
equipment for processing. The definition includes equipment that can
load and process several wafers but where the etching parameters,
e.g., RF power or end point, can be independently determined for
each individual wafer.
b.1.i. ``Chemical vapor deposition'' (CVD) equipment, e.g.,
plasma-enhanced CVD (PECVD) or photo-enhanced CVD, for semiconductor
device manufacturing, having either of the following capabilities,
for deposition of oxides, nitrides, metals or polysilicon:
b.1.i.1. ``Chemical vapor deposition'' equipment operating below
105 Pa; or
b.1.i.2. PECVD equipment operating either below 60 Pa (450
millitorr) or having automatic cassette-to-cassette and load lock
wafer handling;
Note: 3B991.b.1.i does not control low pressure ``chemical vapor
deposition'' (LPCVD) systems or reactive ``sputtering'' equipment.
b.1.j. Electron beam systems specially designed or modified for
mask making or semiconductor device processing having any of the
following characteristics:
b.1.j.1. Electrostatic beam deflection;
b.1.j.2. Shaped, non-Gaussian beam profile;
b.1.j.3. Digital-to-analog conversion rate exceeding 3 MHz;
b.1.j.4. Digital-to-analog conversion accuracy exceeding 12 bit;
or
b.1.j.5. Target-to-beam position feedback control precision of 1
micrometer or finer;
Note: 3B991.b.1.j does not control electron beam deposition
systems or general purpose scanning electron microscopes.
b.1.k. Surface finishing equipment for the processing of
semiconductor wafers as follows:
b.1.k.1. Specially designed equipment for backside processing of
wafers thinner than 100 micrometer and the subsequent separation
thereof; or
b.1.k.2. Specially designed equipment for achieving a surface
roughness of the active surface of a processed wafer with a two-
sigma value of 2 micrometer or less, total indicator reading (TIR);
Note: 3B991.b.1.k does not control single-side lapping and
polishing equipment for wafer surface finishing.
b.1.l. Interconnection equipment which includes common single or
multiple vacuum chambers specially designed to permit the
integration of any equipment controlled by 3B991 into a complete
system;
b.1.m. ``Stored program controlled'' equipment using ``lasers''
for the repair or trimming of ``monolithic integrated circuits''
with either of the following characteristics:
b.1.m.1. Positioning accuracy less than <plus-minus>1
micrometer; or
b.1.m.2. Spot size (kerf width) less than 3 micrometer.
b.2. Masks, mask ``substrates'', mask-making equipment and image
transfer equipment for the manufacture of devices and components as
specified in the heading of 3B991, as follows:
Note: The term ``masks'' refers to those used in electron beam
lithography, X-ray lithography, and ultraviolet lithography, as well
as the usual ultraviolet and visible photo-lithography.
b.2.a. Finished masks, reticles and designs therefor, except:
b.2.a.1. Finished masks or reticles for the production of
unembargoed integrated circuits; or
b.2.a.2. Masks or reticles, having both of the following
characteristics:
b.2.a.2.a. Their design is based on geometries of 2.5 micrometer
or more; and
b.2.a.2.b. The design does not include special features to alter
the intended use by means of production equipment or ``software'';
b.2.b. Mask ``substrates'' as follows:
b.2.b.1. Hard surface (e.g., chromium, silicon, molybdenum)
coated ``substrates'' (e.g., glass, quartz, sapphire) for the
preparation of masks having dimensions exceeding 125 mm x 125 mm; or
b.2.b.2. ``Substrates'' specially designed for X-ray masks;
b.2.c. Equipment, other than general purpose computers,
specially designed for computer aided design (CAD) of semiconductor
devices or integrated circuits;
b.2.d. Equipment or machines, as follows, for mask or reticle
fabrication:
b.2.d.1. Photo-optical step and repeat cameras capable of
producing arrays larger than 100 mm x 100 mm, or capable of
producing a single exposure larger than 6 mm x 6 mm in the image
(i.e., focal) plane, or capable of producing line widths of less
than 2.5 micrometer in the photoresist on the ``substrate'';
b.2.d.2. Mask or reticle fabrication equipment using ion or
``laser'' beam lithography capable of producing line widths of less
than 2.5 micrometer; or
b.2.d.3. Equipment or holders for altering masks or reticles or
adding pellicles to remove defects;
Note: 3B991.b.2.d.1 and b.2.d.2 do not control mask fabrication
equipment using photo-optical methods which was either commercially
available before the 1st January, 1980, or has a performance no
better than such equipment.
b.2.e. ``Stored program controlled'' equipment for the
inspection of masks, reticles or pellicles with:
b.2.e.1. A resolution of 0.25 micrometer or finer; and
b.2.e.2. A precision of 0.75 micrometer or finer over a distance
in one or two coordinates of 63.5 mm or more;
Note: 3B991.b.2.e does not control general purpose scanning
electron microscopes except when specially designed and instrumented
for automatic pattern inspection.
b.2.f. Align and expose equipment for wafer production using
photo-optical methods, including both projection image transfer
equipment and step and repeat equipment, capable of performing any
of the following functions:
Note: 3B991.b.2.f does not control photo-optical contact and
proximity mask align and expose equipment or contact image transfer
equipment.
b.2.f.1. Production of a pattern size of less than 2.5
micrometer;
b.2.f.2. Alignment with a precision finer than <plus-minus> 0.25
micrometer (3 sigma); or
b.2.f.3. Machine-to-machine overlay no better than <plus-minus>
0.3 micrometer;
b.2.g. Electron beam, ion beam or X-ray equipment for projection
image transfer capable of producing patterns less than 2.5
micrometer;
Note: For focussed, deflected-beam systems (direct write
systems), see 3B991.b.1.j or b.10.
b.2.h. Equipment using ``lasers'' for direct write on wafers
capable of producing patterns less than 2.5 micrometer.
b.3. Equipment for the assembly of integrated circuits, as
follows:
b.3.a. ``Stored program controlled'' die bonders having all of
the following characteristics:
b.3.a.1. Specially designed for ``hybrid integrated circuits'';
b.3.a.2. X-Y stage positioning travel exceeding 37.5 x 37.5 mm;
and
b.3.a.3. Placement accuracy in the X-Y plane of finer than
<plus-minus> 10 micrometer;
b.3.b. ``Stored program controlled'' equipment for producing
multiple bonds in a single operation (e.g., beam lead bonders, chip
carrier bonders, tape bonders);
b.3.c. Semi-automatic or automatic hot cap sealers, in which the
cap is heated locally to a higher temperature than the body of the
package, specially designed for ceramic microcircuit packages
controlled by 3A001 and that have a throughput equal to or more than
one package per minute.
Note: 3B991.b.3 does not control general purpose resistance type
spot welders.
b.4. Filters for clean rooms capable of providing an air
environment of 10 or less particles of 0.3 micrometer or smaller per
0.02832 m<SUP>3</SUP> and filter materials therefor;
3B992 Equipment not controlled by 3B002 for the inspection or testing
of electronic components and materials, and specially designed
components and accessories therefor;
License Requirements
Reason for Control: AT
Control(s) Country Chart
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: N/A
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: Equipment in number
Related Controls: N/A
Related Definitions: N/A
[[Page 2510]]
Items: a. Equipment specially designed for the inspection or testing
of electron tubes, optical elements and specially designed
components therefor controlled by 3A001 or 3A991;
b. Equipment specially designed for the inspection or testing of
semiconductor devices, integrated circuits and ``assemblies'', as
follows, and systems incorporating or having the characteristics of
such equipment:
Note: 3B992.b also controls equipment used or modified for use
in the inspection or testing of other devices, such as imaging
devices, electro-optical devices, acoustic-wave devices.
b.1. ``Stored program controlled'' inspection equipment for the
automatic detection of defects, errors or contaminants of 0.6
micrometer or less in or on processed wafers, ``substrates'', other
than printed circuit boards or chips, using optical image
acquisition techniques for pattern comparison;
Note: 3B992.b.1 does not control general purpose scanning
electron microscopes, except when specially designed and
instrumented for automatic pattern inspection.
b.2. Specially designed ``stored program controlled'' measuring
and analysis equipment, as follows:
b.2.a. Specially designed for the measurement of oxygen or
carbon content in semiconductor materials;
b.2.b. Equipment for line width measurement with a resolution of
1 micrometer or finer;
b.2.c. Specially designed flatness measurement instruments
capable of measuring deviations from flatness of 10 micrometer or
less with a resolution of 1 micrometer or finer.
b.3. ``Stored program controlled'' wafer probing equipment
having any of the following characteristics:
b.3.a. Positioning accuracy finer than 3.5 micrometer;
b.3.b. Capable of testing devices having more than 68 terminals;
or
b.3.c. Capable of testing at a frequency exceeding 1 GHz;
b.4. Test equipment as follows:
b.4.a. ``Stored program controlled'' equipment specially
designed for testing discrete semiconductor devices and
unencapsulated dice, capable of testing at frequencies exceeding 18
GHz;
Technical Note: Discrete semiconductor devices include
photocells and solar cells.
b.4.b. ``Stored program controlled'' equipment specially
designed for testing integrated circuits and ``assemblies'' thereof,
capable of functional testing:
b.4.b.1. At a pattern rate exceeding 20 MHz; or
b.4.b.2. At a pattern rate exceeding 10 MHz but not exceeding 20
MHz and capable of testing packages of more than 68 terminals;
Note: 3B992.b.4.b does not control equipment specially designed
for testing integrated circuits not controlled by 3A001 or 3A991.
Notes: 1. 3B992.b.4.b does not control test equipment specially
designed for testing ``assemblies'' or a class of ``assemblies'' for
home and entertainment applications.
2. 3B992.b.4.b does not control test equipment specially
designed for testing electronic components, ``assemblies'' and
integrated circuits not controlled by 3A001 or 3A991 provided such
test equipment does not incorporate computing facilities with ``user
accessible programmability''.
b.4.c. Equipment specially designed for determining the
performance of focal-plane arrays at wavelengths of more than 1,200
nm, using ``stored program controlled'' measurements or computer
aided evaluation and having any of the following characteristics:
b.4.c.1. Using scanning light spot diameters of less than 0.12
mm;
b.4.c.2. Designed for measuring photosensitive performance
parameters and for evaluating frequency response, modulation
transfer function, uniformity of responsivity or noise; or
b.4.c.3. Designed for evaluating arrays capable of creating
images with more than 32 x 32 line elements;
b.5. Electron beam test systems, capable of operating at or
below 3,000 eV, for non-contactive probing of powered-up
semiconductor devices having any of the following:
b.5.a. Stroboscopic capability with either beam blanking or
detector strobing;
b.5.b. An electron spectrometer for voltage measurements with a
resolution of less than 0.5 V; or
b.5.c. Electrical tests fixtures for performance analysis of
integrated circuits;
Note: 3B992.b.5 does not control scanning electron microscopes,
except when specially designed and instrumented for non-contactive
probing of a powered-up semiconductor device.
b.6. ``Stored program controlled'' multifunctional focused ion
beam systems specially designed for manufacturing, repairing,
physical layout analysis and testing of masks or semiconductor
devices and having either of the following characteristics:
b.6.a. Target-to-beam position feedback control precision of 1
micrometer or finer; or
b.6.b. Digital-to-analog conversion accuracy exceeding 12 bit;
b.7. Particle measuring systems employing ``lasers'' designed
for measuring particle size and concentration in air having both of
the following characteristics:
b.7.a. Capable of measuring particle sizes of 0.2 micrometer or
less at a flow rate of 0.02832 m\3\ per minute or more; and
b.7.b. Capable of characterizing Class 10 clean air or better.
C. Materials
3C001 Hetero-epitaxial materials consisting of a ``substrate'' having
stacked epitaxially grown multiple layers of any of the following (see
List of Items Controlled).
License Requirements
Reason for Control: NS, AT
Control(s) Country Chart
NS applies to entire entry............. NS Column 2
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: $3000
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: $ value
Related Controls: N/A
Related Definitions: III/V compounds are polycrystalline or binary
or complex monocrystalline products consisting of elements of groups
IIIA and VA of Mendeleyev's periodic classification table (e.g.,
gallium arsenide, gallium-aluminium arsenide, indium phosphide).
Items: a. Silicon;
b. Germanium; or
c. III/V compounds of gallium or indium.
3C002 Resist material and ``substrates'' coated with controlled
resists.
License Requirements
Reason for Control: NS, AT
Control(s) Country Chart
NS applies to entire entry............. NS Column 2
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: $3000
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: $ value
Related Controls: N/A
Related Definitions: Silylation techniques are defined as processes
incorporating oxidation of the resist surface to enhance performance
for both wet and dry developing.
Items: a. Positive resists designed for semiconductor lithography
specially adjusted (optimized) for use at wavelengths below 370 nm;
b. All resists designed for use with electron beams or ion
beams, with a sensitivity of 0.01 <greek-m>coulomb/mm\2\ or better;
c. All resists designed for use with X-rays, with a sensitivity
of 2.5 mJ/mm\2\ or better;
d. All resists optimized for surface imaging technologies,
including silylated resists.
3C003 Organo-inorganic compounds, as follows (see List of Items
Controlled).
License Requirements
Reason for Control: NS, AT
Control(s) Country Chart
NS applies to entire entry............. NS Column 2
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: $3000
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: $ value
Related Controls: This entry controls only compounds whose metallic,
partly metallic or non-metallic element is directly linked
[[Page 2511]]
to carbon in the organic part of the molecule.
Related Definition: N/A
Items: a. Organo-metallic compounds of aluminium, gallium or indium
having a purity (metal basis) better than 99.999%;
b. Organo-arsenic, organo-antimony and organo-phosphorus
compounds having a purity (inorganic element basis) better than
99.999%.
3C004 Hydrides of phosphorus, arsenic or antimony, having a purity
better than 99.999%, even diluted in inert gases or hydrogen.
License Requirements
Reason for Control: NS, AT
Control(s) Country Chart
NS applies to entire entry............. NS Column 2
AT applies to entire entry............. AT Column 1
License Exceptions
LVS: $3000
GBS: N/A
CIV: N/A
List of Items Controlled
Unit: $ value
Related Controls: This entry does not control hydrides containing
less than 20% molar or more of inert gases or hydrogen.
Related Definition: N/A
Items: The list of items controlled is contained in the ECCN
heading.
D. Software
3D001 ``Software'' specially designed for the ``development'' or
``production'' of equipment controlled by 3A001.b to 3A002.g or 3B
(except 3B991 and 3B992).
License Requirements
Reason for Control: NS, AT
Control(s) Country Chart
NS applies to ``software'' for NS Column 1
equipment controlled by 3A001.b to
3A001.f, 3A002, and 3B.
AT applies to entire entry............. AT Column 1
License Requirement Notes: See Sec. 743.1 of the EAR for
reporting requirements for exports under License Exceptions.
License Exceptions
CIV: N/A
TSR: Yes
List of Items Controlled
Unit: $ value
Related Controls: See also 3D101
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3D002 ``Software'' specially designed for the ``use'' of ``stored
program controlled'' equipment controlled by 3B (except 3B991 and
3B992).
License Requirements
Reason for Control: NS, AT
Control(s) Country Chart
NS applies to entire entry............. NS Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: Yes
List of Items Controlled
Unit: $ value
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3D003 Computer-aided-design (CAD) ``software'' designed for
semiconductor devices or integrated circuits, having any of the
following (see List of Items Controlled).
License Requirements
Reason for Control: NS, AT
Control(s) Country Chart
NS applies to entire entry............. NS Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: Yes
List of Items Controlled
Unit: $ value
Related Controls: This entry does not control ``software'' specially
designed for schematic entry, logic simulation, placing and routing,
layout verification or pattern generation tape.
Related Definitions: (1) Libraries, design attributes or associated
data for the design of semiconductor devices or integrated circuits
are considered as ``technology''. (2) A lithographic processing
simulator is a ``software'' package used in the design phase to
define the sequence of lithographic, etching and deposition steps
for translating masking patterns into specific topographical
patterns in conductors, dielectrics or semiconductor material.
Items: a. Design rules or circuit verification rules;
b. Simulation of the physically laid out circuits; or
c. Lithographic processing simulators for design.
3D101 ``Software'' specially designed for the ``use'' of equipment
controlled by 3A101.b.
License Requirements
Reason for Control: MT, AT
Control(s) Country Chart
MT applies to entire entry............. MT Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: N/A
List of Items Controlled
Unit: $ value
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3D102 ``Software'' specially designed for the ``development'' or
``production'' of equipment controlled by 3A001.a.1.a or 3A101.
License Requirements
Reason for Control: MT, AT
Control(s) Country Chart
MT applies to entire entry............. MT Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: N/A
List of Items Controlled
Unit: $ value
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3D980 ``Software'' specially designed for the ``development'',
``production'', or ``use'' of items controlled by 3A980 and 3A981.
License Requirements
Reason for Control: CC, AT
Control(s) Country Chart
CC applies to entire entry............. CC Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: N/A
List of Items Controlled
Unit: $ value
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3D991 ``Software'' specially designed for the ``development'',
``production'', or ``use'' of electronic devices or components
controlled by 3A991, general purpose electronic equipment controlled by
3A992, or manufacturing and test equipment controlled by 3B991 and
3B992.
License Requirements
Reason for Control: AT
Control(s) Country Chart
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: N/A
List of Items Controlled
Unit: $ value
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
[[Page 2512]]
E. Technology
3E001 ``Technology'' according to the General Technology Note for the
``development'' or ``production'' of equipment or materials controlled
by 3A (except 3A292, 3A980, 3A981, 3A991 or 3A992), 3B (except 3B991
and 3B992) or 3C.
License Requirements
Reason for Control: NS, MT, NP, AT
Control(s) Country Chart
NS applies to ``technology'' for items NS Column 1
controlled by 3A001, 3A002, 3B001 and
3B002 or 3C001 to 3C004.
MT applies to ``technology'' for MT Column 1
equipment controlled by 3A001 or 3A101
for MT reasons.
NP applies to ``technology'' for NP Column 1
equipment controlled by 3A201, 3A225
to 3A233 for NP reasons.
AT applies to entire entry............. AT Column 1
License Requirement Notes: See Sec. 743.1 of the EAR for
reporting requirements for exports under License Exceptions.
License Exceptions
CIV: N/A
TSR: Yes, except N/A for MT
List of Items Controlled
Unit: N/A
Related Controls: (1) See also 3E101 and 3E201. (2) 3E001 does not
control ``technology'' for the ``development'' or ``production'' of:
(a) Microwave transistors operating at frequencies below 31 GHz; (b)
Integrated circuits controlled by 3A001.a.3 to a.12, having all of
the following: 1. Using ``technology'' of one micrometer or more,
AND 2. Not incorporating multi-layer structures. (3) The term multi-
layer structures in this entry does not include devices
incorporating a maximum of two metal layers and two polysilicon
layers.
Related Definition: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3E002 Other ``technology'' for the ``development'' or ``production''
of items described in the List of Items Controlled.
License Requirements
Reason for Control: NS, AT
Control(s) Country Chart
NS applies to entire entry............. NS Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: Yes
List of Items Controlled
Unit: N/A
Related Controls: N/A
Related Definitions: N/A
Items: a. Vacuum microelectronic devices;
b. Hetero-structure semiconductor devices such as high electron
mobility transistors (HEMT), hetero-bipolar transistors (HBT),
quantum well and super lattice devices;
c. ``Superconductive'' electronic devices;
d. Substrates of films of diamond for electronic components.
3E101 ``Technology'' according to the General Technology Note for the
``use'' of equipment or ``software'' controlled by 3A001.a.1.a. or
3A101.
License Requirements
Reason for Control: MT, AT
Control(s) Country Chart
MT applies to entire entry............. MT Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: N/A
List of Items Controlled
Unit: N/A
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3E102 ``Technology'' according to the General Technology Note for the
``development'' of ``software'' controlled by 3D101.
License Requirements
Reason for Control: MT, AT
Control(s) Country Chart
MT applies to entire entry............. MT Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: N/A
List of Items Controlled
Unit: N/A
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3E201 ``Technology'' according to the General Technology Note for the
``use'' of equipment controlled by 3A201, 3A225 to 3A233.
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: N/A
List of Items Controlled
Unit: N/A
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3E292 ``Technology'' according to the General Technology Note for the
``development'', ``production'', or ``use'' of equipment controlled by
3A292.
License Requirements
Reason for Control: NP, AT
Control(s) Country Chart
NP applies to entire entry............. NP Column 2
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: N/A
List of Items Controlled
Unit: N/A
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3E980 ``Technology'' specially designed for ``development'',
``production'', or ``use'' of items controlled by 3A980 and 3A981.
License Requirements
Reason for Control: CC, AT
Control(s) Country Chart
CC applies to entire entry............. CC Column 1
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: N/A
List of Items Controlled
Unit: N/A
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
3E991 ``Technology'' for the ``development'', ``production'', or
``use'' of electronic devices or components controlled by 3A991,
general purpose electronic equipment controlled by 3A992, or
manufacturing and test equipment controlled by 3B991 or 3B992.
License Requirements
Reason for Control: AT
Control(s) Country Chart
AT applies to entire entry............. AT Column 1
License Exceptions
CIV: N/A
TSR: N/A
List of Items Controlled
Unit: N/A
Related Controls: N/A
Related Definitions: N/A
Items: The list of items controlled is contained in the ECCN
heading.
EAR99 Items subject to the EAR that are not elsewhere specified in
this CCL Category or in any other category in the CCL are designated by
the number EAR99.